Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BD139-10
Manufacturer
STManufacturer Product Number
BD139-10
Description
三极管(BJT) 1.25W 80V 1.5A NPN SOT-32
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Ji Dian Ji Current（ic） | 1.5A |
| Ji Dian Ji Jie Zhi Current（icbo） | 100nA |
| Operating Temperature | 150℃ |
| Ji She Ji Ji Chuan Voltage（vceo） | 80V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 500mV@50mA, 500mA |
| Power | 1.25 W |
| DC Gain (hFE@Ic, Vce) | 40@150mA, 2V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 441
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1309 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBD139-16
雙極性晶體管- BJT NPN Silicon Trnsistr
ST
BD13910STU
--
Onsemi
BD13916STU
--
Onsemi
BD13916STU
BD13916 Series NPN 1.25 W 80 V 1.5 A Epitaxial Silicon Transistor - TO-126-3
Onsemi
