Manufacturer
STManufacturer Product Number
SCTW35N65G2V
Description
SILICON CARBIDE POWER MOSFET 650
Manufacturer Standard Lead Time
10-15
Detailed Description
SILICON CARBIDE POWER MOSFET 650
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 45A |
| Operating Temperature | -55℃~200℃ |
| Power | 240W |
| Threshold Voltage | 5V @ 1mA |
| Gate Charge | 73nC @ 20V |
| On-Resistance | 67mΩ @ 20A, 10V |
| Input Capacitance | 1370pF @ 400V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 12.1235 | |
| 600+ | $ 10.5611 |
Minimum:1/Multiple:1
Total amount: