Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB12NM50T4
Manufacturer
STManufacturer Product Number
STB12NM50T4
Description
场效应管(MOSFET) 160W 550V 12A 1个N沟道 TO-263
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-channel |
| Operating Temperature | -65℃~150℃ |
| Drain-Source Voltage | 550V |
| Gate Charge | 39 nC @ 10 V |
| Continuous Drain Current | 12A |
| Power | 160W |
| Input Capacitance | 1000pF@25V |
| On-Resistance | 350mΩ @ 6A, 10V |
| Threshold Voltage | 5V @ 50µA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 85
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.9633 | |
| 10+ | $ 2.6249 | |
| 30+ | $ 2.4119 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSTB13007DT4
雙極性晶體管- BJT NPN power transistor
ST
STB130N6F7
STB130N6F7 Series 60 V 80 A 5 mOhm SMT N-Channel Power Mosfet - D2PAK-3
ST
STB130N6F7
STB130N6F7 Series 60 V 80 A 5 mOhm SMT N-Channel Power Mosfet - D2PAK-3
ST
STB13N60M2
场效应管(MOSFET) 110W 650V 11A 1个N沟道 TO-263-2
ST
