Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB30N65M2AG
Manufacturer
STManufacturer Product Number
STB30N65M2AG
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Power | 190W |
| Continuous Drain Current | 20 A |
| On-Resistance | 180mΩ@10A, 10V |
| Input Capacitance | 1440pF@100V |
| Gate Charge | 30.8 nC @ 10 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.8700 | |
| 10+ | $ 2.7962 | |
| 30+ | $ 2.7475 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSTB30N65M5
N-CH 650V 22A 125mOhm TO263 RoHSconf
ST
STB30N80K5
表面贴装 N 沟道 800V 24A（Tc） 250W（Tc） D2PAK
ST
STB30NF10T4
MOSFET N-Ch 100 Volt 35 Amp
ST
STB30NF10T4
场效应管(MOSFET) 115W 100V 35A 1个N沟道 TO-263-2
ST
