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STB33N65M2
Manufacturer
STManufacturer Product Number
STB33N65M2
Description
STMicroelectronics MDmesh M2 系列 N沟道 Si MOSFET STB33N65M2, 24 A, Vds=650 V, 3引脚 D2PAK封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 24A |
| Operating Temperature | 150℃ |
| Power | 190W |
| Gate Charge | 41.5nC@10V |
| On-Resistance | 140mΩ@12A, 10V |
| Input Capacitance | 1790pF@100V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,260
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1000+ | $ 3.2335 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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