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STD10N60DM2
Manufacturer
STManufacturer Product Number
STD10N60DM2
Description
场效应管(MOSFET) STD10N60DM2 TO-252
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 5V@250µA |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 8A |
| Gate Charge | 15nC@10V |
| Power | 109W |
| On-Resistance | 530mΩ@4A, 10V |
| Input Capacitance | 529pF@100V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,500
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7144 | |
| 100+ | $ 0.5904 | |
| 1250+ | $ 0.5320 | |
| 2500+ | $ 0.5055 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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Vbsemi
