Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD25310Q2T
Manufacturer
TIManufacturer Product Number
CSD25310Q2T
Description
表面贴装 P 沟道 20V 20A（Ta） 2.9W（Ta） 6-WSON（2x2）
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source On-Resistance | 0.089Ω |
| Drain-Source Saturation Current | -9.6A |
| Input Capacitance | 21.7pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1001 | |
| 100+ | $ 0.7478 | |
| 250+ | $ 0.5765 | |
| 1000+ | $ 0.3829 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllCSD25402Q3A
MOSFET P-CH Pwr MOSFET
TI
CSD25402Q3A
场效应管(MOSFET) 2.8W 20V 76A 1个P沟道 VSONP-8(3.3x3.3)
TI
CSD25402Q3A(TOKMAS)
--
Tokmas
CSD25402Q3A-HXY
--
HUAXUANYANG
