Manufacturer
ToshibaManufacturer Product Number
RN1908FE(TE85L,F)
Description
TRANS 2NPN PREBIAS 0.1W ES6
Manufacturer Standard Lead Time
8-12
Detailed Description
TRANS 2NPN PREBIAS 0.1W ES6
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 100mW |
| Ji She Ji Ji Chuan Voltage(vceo) | 50V |
| Te Zheng Frequency | 250MHz |
| Ji Dian Ji Current(ic) | 100mA |
| Input Resistance | 22 kΩ |
| Jing Ti Guan Type | 2 NPN Pre-biased (Dual) |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV @ 250µA, 5mA |
| Resistance Bi | 47 kOhms |
| Ji Dian Ji Jie Zhi Current(icbo) | 100nA (ICBO) |
| DC Gain (hFE@Ic, Vce) | 80 @ 10mA, 5V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5000+ | $ 0.0501 |
Minimum:1/Multiple:1
Total amount:
RN1909,LF(CT
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6
Toshiba