Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RN2106,LF(CT
Manufacturer
ToshibaManufacturer Product Number
RN2106,LF(CT
Description
雙極結晶體管 - 預偏置 PNP BRT, Q1BSR=4.7kOhm, Q1BER=47kOhm, VCEO=-50V, IC=-0.1A, inSOT-416 (SSM) package
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 100mW |
| Te Zheng Frequency | 200MHz |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Jie Zhi Current（icbo） | 500nA |
| Ji Dian Ji Current（ic） | 100mA |
| DC Gain (hFE@Ic, Vce) | 80@10mA, 5V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 300mV@250µA, 5mA |
| Jing Ti Guan Type | PNP-Pre-biased |
| Input Resistance | 4.7kΩ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,860
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2298 | |
| 10+ | $ 0.1420 | |
| 100+ | $ 0.0877 | |
| 500+ | $ 0.0641 | |
| 1000+ | $ 0.0432 | |
| 5000+ | $ 0.0334 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
RN2106MFV,L3F(CT
--
Toshiba
RN2107,LXHF(CT
雙極結晶體管 - 預偏置 AUTO AEC-Q Single PNP Q1BSR=10kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-416)
Toshiba
RN2107MFV,L3F(CT
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Toshiba
RN2108,LF(CT
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SSM
Toshiba
