Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RN2905FE,LF(CT
Manufacturer
ToshibaManufacturer Product Number
RN2905FE,LF(CT
Description
开关晶体管 - 偏压电阻器 Bias Resistor Built-in transistor
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 100mW |
| Ji She Ji Ji Chuan Voltage（vceo） | 50V |
| Ji Dian Ji Current（ic） | 100mA |
| DC Gain (hFE@Ic, Vce) | 80@10mA, 5V |
| Jing Ti Guan Type | 2 PNP-prebiased |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 36,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 4000+ | $ 0.0418 | |
| 12000+ | $ 0.0404 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
RN2906,LXHF(CT
雙極結晶體管 - 預偏置 AUTO AEC-Q 2-in-1 (Point-Sym) PNP x 2 , R1=4.7kOhm, R2=47kOhm, VCEO=-50V, IC=-0.1A (SOT-363)
Toshiba
RN2906FE,LF(CT
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Toshiba
RN2907,LF(CT
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Toshiba
RN2908,LF(CT
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Toshiba