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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RN4989FE,LF(CT

Manufacturer

Toshiba

Manufacturer Product Number

RN4989FE,LF(CT

Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

Manufacturer Standard Lead Time

3-5

Detailed Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Power	100mW
Ji She Ji Ji Chuan Voltage（vceo）	50V
Ji Dian Ji Jie Zhi Current（icbo）	500nA
Ji Dian Ji Current（ic）	100mA
Jing Ti Guan Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Resistance Bi	22 kΩ
DC Gain (hFE@Ic, Vce)	70 @ 10mA, 5V
Collector-Emitter Saturation Voltage (VCE(sat))	300mV @ 250µA, 5mA
Input Resistance	47 kiloohms
Te Zheng Frequency	250MHz, 200MHz

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 100

Quantity	Unit Price	Ext Price
1+	$ 0.1365

Price For：Each

Minimum:1/Multiple:1

Total amount:

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