Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TK110N65Z,S1F
Manufacturer
ToshibaManufacturer Product Number
TK110N65Z,S1F
Description
MOSFET DTMOS VI TO-247 PD=190W F=1MHZ
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55 ℃ ~ +150 ℃ |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 24A |
| Threshold Voltage | 4V |
| Power | 190W |
| Type | MOSFET |
| Gate Charge | 40nC |
| On-Resistance | 110mΩ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 432
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 13.8224 | |
| 10+ | $ 7.3429 | |
| 120+ | $ 6.9196 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllTK110N65Z,S1F(S
--
Toshiba
TK110P10PL,RQ(S2
功率场效应管 MOSFET N通道 100 V 60 A 0.0089 ohm TO-252 (DPAK) 表面安装
Toshiba
TK110P10PL,RQ(S2
原装正品，上海工厂库存
Toshiba
TK110U65Z,RQ
原装正品，上海工厂库存
Toshiba
