Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TK11S10N1L,LQ
Manufacturer
ToshibaManufacturer Product Number
TK11S10N1L,LQ
Description
--
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source Saturation Current | 11 A |
| Drain-Source On-Resistance | 0.05Ω |
| Input Capacitance | 67pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,264
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3217 | |
| 10+ | $ 0.2869 | |
| 30+ | $ 0.2715 | |
| 100+ | $ 0.2548 | |
| 500+ | $ 0.2437 | |
| 1000+ | $ 0.2395 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllTK125V65Z,LQ
--
Toshiba
TK125V65Z,LQ
MOSFET N-CH 650V 24A 5DFN
Toshiba
TK12A50D
--
Toshiba
TK12A50D(STA4,Q,M)
场效应管(MOSFET) 45W 500V 12A 1个N沟道 TO-220SIS
Toshiba
