Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TK12E60W,S1VX
Manufacturer
ToshibaManufacturer Product Number
TK12E60W,S1VX
Description
MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Operating Temperature | 150℃ |
| Power | 110W |
| Gate Charge | 25nC@10V |
| Continuous Drain Current | 11.5A |
| Threshold Voltage | 3.7V@600μA |
| Input Capacitance | 890pF@300V |
| On-Resistance | 300mΩ@5.8A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 50
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 8.6031 | |
| 50+ | $ 4.4784 | |
| 100+ | $ 4.0802 | |
| 500+ | $ 3.3811 | |
| 1000+ | $ 3.2725 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllTK12E60W,S1VX(S
Toshiba TK 系列 Si N沟道 MOSFET TK12E60W,S1VX(S, 11.5 A, Vds=600 V, 3引脚 TO-220封装
Toshiba
TK12E60W,S1VX(S
--
Toshiba
TK12P50W,RQ(S
原装正品，上海工厂库存
Toshiba
TK12P60W,RVQ
MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC
Toshiba
