Manufacturer
ToshibaManufacturer Product Number
TK16E60W,S1VX(S
Description
Toshiba N沟道 Si MOSFET TK16E60W,S1VX(S, 15.8 A, Vds=600 V, 3引脚 TO-220封装
Manufacturer Standard Lead Time
3-5
Detailed Description
Toshiba N沟道 Si MOSFET TK16E60W,S1VX(S, 15.8 A, Vds=600 V, 3引脚 TO-220封装
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Power | 130W |
| Operating Temperature | +150℃ |
| Type | N |
| Threshold Voltage | 3.7 V |
| Continuous Drain Current | 15.8A |
| Gate Charge | 38nC@10V |
| On-Resistance | 190mΩ |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.5234 |
Minimum:1/Multiple:1
Total amount: