Manufacturer
ToshibaManufacturer Product Number
TK39N60W,S1VF(S
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
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| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 600V |
| Input Capacitance | 10pF |
| Drain-Source On-Resistance | 0.065Ω |
| Drain-Source Saturation Current | 38.8A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.5134 | |
| 10+ | $ 2.9884 | |
| 30+ | $ 2.6765 | |
| 90+ | $ 2.3631 |
Minimum:1/Multiple:1
Total amount:
TK39N60W5,S1VF(S
Toshiba DTMOSIV 系列 N沟道 Si MOSFET TK39N60W5,S1VF(S, 38.8 A, Vds=600 V, 3引脚 TO-247封装
Toshiba