Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TK65G10N1,RQ
Manufacturer
ToshibaManufacturer Product Number
TK65G10N1,RQ
Description
MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-Channel |
| Operating Temperature | 150℃ (TJ) |
| Drain-Source Voltage | 100 V |
| Gate Charge | 81 nC @ 10 V |
| Threshold Voltage | 4V @ 1mA |
| Continuous Drain Current | 65A (Ta) |
| Power | 156W (Tc) |
| On-Resistance | 4.5 milliohms @ 32.5A, 10V |
| Input Capacitance | 5400 pF @ 50 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 10
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.2126 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
TK65S04N1L,LQ
--
Toshiba
TK65S04N1L,LQ
MOSFET UMOSVIII 40V 4.3m max(VGS=10V) DPAK
Toshiba
TK6A60D
--
Toshiba
TK6A60D(STA4,X,M)
--
Toshiba
