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2N7002E-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
2N7002E-T1-GE3
Description
场效应管(MOSFET) 350mW 60V 240mA 1个N沟道 TO-236
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
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Additional Resources
| Attribute | Description |
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In Stock: 22,402
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0000 | |
| 200+ | $ 0.0000 | |
| 1500+ | $ 0.0000 | |
| 3000+ | $ 0.0000 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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2N7002EM3T5G
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2N7002EM3T5G
类型：N沟道 漏源电压(Vdss)：60V 连续漏极电流(Id)：350mA 功率(Pd)：150mW 导通电阻(RDS(on)@Vgs,Id)：1.5Ω@4.5V,200mA 阈值电压(Vgs(th)@Id)：1.85V@250uA 输入电容(Ciss@Vds)：42pF@10V 工作温度：+150℃@(Tj)
台舟
2N7002EM3T5G
场效应管(MOSFET) 150mW 60V 350mA 1个N沟道 SOT-723
台舟
2N7002ET1G
N-Channel 60 V 2.5 ? 300 mW 0.81 nC Surface Mount Small Signal Mosfet - SOT-23
Onsemi
