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SI1013R-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI1013R-T1-GE3
Description
场效应管(MOSFET) 150mW 20V 350mA 1个P沟道 SC-75A
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Power | 150 mW |
| Gate Charge | 1.5nC @ 4.5V |
| Threshold Voltage | 450mV @ 250μA |
| Continuous Drain Current | 350mA |
| On-Resistance | 1.2Ω@350mA，4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 11
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1267 | |
| 100+ | $ 0.1003 | |
| 750+ | $ 0.0891 | |
| 1500+ | $ 0.0822 | |
| 3000+ | $ 0.0780 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI1016CX-T1-GE3
MOSFET 20V .5/.35A PCH COMPLIMENTARY
VISHAY
SI1016CX-T1-GE3
场效应管(MOSFET) 220mW 396mΩ@500mA,4.5V 20V 1个N沟道+1个P沟道 SC-89-6
VISHAY
SI1016X-T1-GE3
场效应管(MOSFET) 250mW 20V 485mA；370mA 1个N沟道+1个P沟道 SOT-563
VISHAY
Si1016X-T1-GE3-VB
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