Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI1922EDH-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI1922EDH-T1-GE3
Description
场效应管(MOSFET) 1.25W 20V 1.3A 2个N沟道 SC-70-6(SOT-363)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Type | Dual N-Channel |
| Power | 1.25 W |
| Continuous Drain Current | 1.3A |
| On-Resistance | 198mΩ@1A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 42
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1657 | |
| 200+ | $ 0.1267 | |
| 1500+ | $ 0.1086 | |
| 3000+ | $ 0.1003 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI1926DL-T1-BE3
--
VISHAY
SI1926DL-T1-BE3
MOSFET 60V N-CHANNEL DUAL
VISHAY
SI1926DL-T1-E3
场效应管(MOSFET) 510mW 60V 370mA 2个N沟道 SOT-363-6
VISHAY
SI1965DH-T1-GE3-VB
--
Vbsemi
