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SI1967DH-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI1967DH-T1-GE3
Description
场效应管(MOSFET) 1.25W 20V 1.3A 2个P沟道 SOT-363
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Power | 1.25 W |
| Drain-Source Saturation Current | 1A |
| Drain-Source On-Resistance | 0.49Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,098
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2312 | |
| 100+ | $ 0.1782 | |
| 750+ | $ 0.1462 | |
| 1500+ | $ 0.1323 | |
| 3000+ | $ 0.1212 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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