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SI2302CDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2302CDS-T1-GE3
Description
MOSFET N-CH 20V 2.6A SOT23-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 2.6A |
| Drain-Source On-Resistance | 0.057Ω |
| Power | 0.86W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 102,439
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.3243 | |
| 10+ | $ 0.8244 | |
| 100+ | $ 0.5320 | |
| 500+ | $ 0.4052 | |
| 1000+ | $ 0.3648 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
Si2302CDS-T1-GE3-ES
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EIECSUPER
Si2302CDS-T1-GE3-HXY
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HUAXUANYANG
SI2302CDS-T1-GE3-MS
类型：N沟道漏源电压(Vdss)：20V连续漏极电流(Id)：3A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：40mΩ@4.5V,3A阈值电压Vgs(th)@Id)：0.4V至1V@250uA
MSKSEMI
SI2302CDS-T1-GE3-VB
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Vbsemi
