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SI2302DDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2302DDS-T1-GE3
Description
场效应管(MOSFET) 710mW 20V 2.9A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source Saturation Current | 2.6A |
| Drain-Source On-Resistance | 0.057Ω |
| Power | 0.86W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 78,459
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0780 | |
| 200+ | $ 0.0501 | |
| 1500+ | $ 0.0432 | |
| 3000+ | $ 0.0376 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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Si2302DDS-T1-GE3-HXY
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