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SI2304DDS-T1-BE3
Manufacturer
VISHAYManufacturer Product Number
SI2304DDS-T1-BE3
Description
MOSFET N-CH 30V 3.3A SOT23
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Continuous Drain Current | 3.3A, 3.6A |
| Power | 1.1W, 1.7W |
| Gate Charge | 6.7nC @ 10V |
| On-Resistance | 60mΩ @ 3.2A, 10V |
| Input Capacitance | 235pF @ 15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,728
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9595 | |
| 10+ | $ 0.5946 | |
| 100+ | $ 0.3788 | |
| 500+ | $ 0.2855 | |
| 1000+ | $ 0.2548 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2304DDS-T1-GE3
场效应管(MOSFET) 1.1W；1.7W 30V 3.3A；3.6A 1个N沟道 SOT-23
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Si2304DDS-T1-GE3-HXY
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