Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI3407DV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3407DV-T1-GE3
Description
MOSFET 20V 8.0A 4.2W 37mohm @ 2.5V
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 8A |
| Threshold Voltage | 1.5V@250µA |
| Gate Charge | 63nC@10V |
| Power | 4.2W |
| On-Resistance | 24mΩ@7.5A, 4.5V |
| Input Capacitance | 1670pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,530
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4874 | |
| 10+ | $ 0.3969 | |
| 25+ | $ 0.3509 | |
| 50+ | $ 0.3203 | |
| 100+ | $ 0.2966 | |
| 500+ | $ 0.2799 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI3415-TP
表面贴装型-P-通道-20V-4A（Ta）-350mW（Ta）-SOT-23
MCC
SI3417DV-T1-GE3
MOSFET P-CH 30V 8A TSOP-6
VISHAY
SI3417DV-T1-GE3
P-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223
VISHAY
SI3420A-TP
场效应管(MOSFET) 1.25W 20V 6A 1个N沟道 SOT-23
MCC
