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SI3429EDV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3429EDV-T1-GE3
Description
20V, 8A, 21MOHM, P-CH, TSOP-6
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Continuous Drain Current | 8A |
| Type | P-Channel |
| Power | 4.2W |
| Gate Charge | 118 nC @ 10 V |
| On-Resistance | 21mΩ @ 4A, 10V |
| Input Capacitance | 4085pF @ 50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 120
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3788 | |
| 10+ | $ 0.2980 | |
| 30+ | $ 0.2646 | |
| 100+ | $ 0.2214 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI3430DV-T1-E3
MOSFET 100V 8A 2W
VISHAY
SI3430DV-T1-GE3
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
VISHAY
SI3430DV-T1-GE3-VB
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SI3433CDV
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TECH PUBLIC
