Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI3440DV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3440DV-T1-GE3
Description
Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Threshold Voltage | 4V@250µA |
| Continuous Drain Current | 1.5A |
| Drain-Source Voltage | 150V |
| Gate Charge | 8nC@10V |
| Power | 1.14W |
| On-Resistance | 375 mΩ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0890 | |
| 10+ | $ 0.9065 | |
| 30+ | $ 0.8160 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI3442BDV-T1-E3
--
VISHAY
SI3442BDV-T1-E3
MOSFET 20V 3A
VISHAY
SI3443BDV-T1-E3
MOSFET P-CH 20V 3.6A 6-TSOP
VISHAY
SI3443BDV-T1-E3
--
VISHAY
