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SI3458BDV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3458BDV-T1-GE3
Description
MOSFET N-CH 60V 4.1A 6-TSOP
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-channel |
| Gate Charge | 11nC@10V |
| Continuous Drain Current | 4.1A |
| Input Capacitance | 350pF @ 30V |
| Power | 2W,3.3W |
| On-Resistance | 100mΩ@3.2A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,429
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0737 | |
| 10+ | $ 0.8286 | |
| 100+ | $ 0.5723 | |
| 500+ | $ 0.4540 | |
| 1000+ | $ 0.4164 | |
| 3000+ | $ 0.3690 | |
| 6000+ | $ 0.3537 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI3458BDV-T1-GE3-VB
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Vbsemi
SI3459BDV
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TECH PUBLIC
SI3459BDV-T1-E3
MOSFET 60V 2.9A 3.3W 216mohm @ 10V
VISHAY
SI3459BDV-T1-E3
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VISHAY
