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SI3460BDV-T1-BE3
Manufacturer
VISHAYManufacturer Product Number
SI3460BDV-T1-BE3
Description
N-CHANNEL 20-V (D-S) MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Input Capacitance | 860pF@10V |
| Power | 2W,3.5W |
| Continuous Drain Current | 6.7A, 8A |
| Gate Charge | 24nC @ 8V |
| On-Resistance | 27mΩ @ 5.1A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
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Associated Product
See AllSI3460DDV-T1-GE3
N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
VISHAY
SI3460DDV-T1-GE3
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VISHAY
SI3460DV
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TECH PUBLIC
SI3462-E01-GMR
IC POE/POE PSE SGL PORT 11-QFN
Silicon
