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SI3493DDV-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI3493DDV-T1-GE3
Description
Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Continuous Drain Current | 8A |
| Gate Charge | 30nC@4.5V |
| Power | 3.6 W |
| On-Resistance | 24mΩ@7.5A, 4.5V |
| Input Capacitance | 1825pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,118
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1393 | |
| 200+ | $ 0.1058 | |
| 1500+ | $ 0.0919 | |
| 3000+ | $ 0.0836 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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