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SI3590DV-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI3590DV-T1-E3
Description
MOSFET-阵列-N-和-P-沟道-30V-2.5A-1.7A-830mW-表面贴装型-6-TSOP
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel and P-channel |
| Drain-Source Voltage | 30V |
| Power | 830mW |
| Threshold Voltage | 1.5V@250µA |
| Continuous Drain Current | 2.5A, 1.7A |
| On-Resistance | 77mΩ@3A，4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 969
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2047 | |
| 100+ | $ 0.1615 | |
| 750+ | $ 0.1434 | |
| 1500+ | $ 0.1337 | |
| 3000+ | $ 0.1253 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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MOSFET 30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
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