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SI4143DY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4143DY-T1-GE3
Description
MOSFET P-CHAN 30V D-S SO8
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Drain-Source Voltage | 30V |
| Power | 6W |
| Gate Charge | 167 nC @ 10 V |
| Continuous Drain Current | 25.3A |
| On-Resistance | 6.2mΩ @ 12A, 10V |
| Input Capacitance | 6630pF @ 15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 37,500
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 2500+ | $ 0.6517 | |
| 5000+ | $ 0.6030 | |
| 7500+ | $ 0.5793 | |
| 12500+ | $ 0.5626 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI4151DY-T1-GE3
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VISHAY
SI4153DY-T1-GE3
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VISHAY
SI4154DY-T1-GE3
场效应管(MOSFET) 3.5W；7.8W 40V 36A 1个N沟道 SOIC-8
VISHAY
SI4154DY-T1-GE3
场效应管(MOSFET) 3.5W；7.8W 40V 36A 1个N沟道 SOIC-8
VISHAY
