Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI4162DY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4162DY-T1-GE3
Description
MOSFET 30V 19.3A 5.0W
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-Channel |
| Gate Charge | 30nC@10V |
| Drain-Source Voltage | 30V |
| On-Resistance | 8.2mΩ |
| Input Capacitance | 1155pF@15V |
| Continuous Drain Current | 19.3A |
| Power | 2.5W, 5W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 858
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.3186 | |
| 10+ | $ 1.4636 | |
| 100+ | $ 0.9692 | |
| 500+ | $ 0.7562 | |
| 1000+ | $ 0.6865 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI4164DY-T1-GE3
场效应管(MOSFET) 3W；6W 30V 30A 1个N沟道 SOIC-8
VISHAY
SI4164DY-T1-GE3
MOSFET N-CH 30V 30A 8-SOIC
VISHAY
SI4166DY-T1-GE3
场效应管(MOSFET) 6.5W；3W 30V 30.5A 1个N沟道 SOIC-8
VISHAY
SI4166DY-T1-GE3
MOSFET 30V 30.5A 6.5W
VISHAY
