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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI4463CDY-T1-GE3

Manufacturer

VISHAY

Manufacturer Product Number

SI4463CDY-T1-GE3

Description

场效应管(MOSFET) 2.7W；5W 20V 13.6A；49A 1个P沟道 SOIC-8-150mil

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) 2.7W；5W 20V 13.6A；49A 1个P沟道 SOIC-8-150mil

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Gate-Source Breakdown Voltage	20V
Power	5W
Drain-Source On-Resistance	0.008Ω
Input Capacitance	830pF
Drain-Source Saturation Current	18.6A

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 1,503

Quantity	Unit Price	Ext Price
1+	$ 0.5654
100+	$ 0.4665
1250+	$ 0.4205
2500+	$ 0.3997

Price For：Each

Minimum:1/Multiple:1

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