Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI4564DY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4564DY-T1-GE3
Description
场效应管(MOSFET) 3.1W；3.2W 40V 9.2A；10A 1个N沟道+1个P沟道 SOIC-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2V@250μA |
| Gate Charge | 31 nC @ 10 V |
| Continuous Drain Current | 10A |
| Type | N+P-Channel |
| Power | 3.1W, 3.2W |
| Input Capacitance | 855pF@20V |
| Drain-Source Voltage | 2V, 2.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,325
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5709 | |
| 100+ | $ 0.4721 | |
| 1250+ | $ 0.4261 | |
| 2500+ | $ 0.4052 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI4599DY
--
TECH PUBLIC
SI4599DY-T1-GE3
N- AND P- CHANNEL 40-V (D-S) MOSFET
VISHAY
Si4599DY-T1-GE3
Trans MOSFET N/P-CH 40V 5.6A/4.7A 8-Pin SOIC N T/R
VISHAY
SI4599DY-T1-GE3-VB
--
Vbsemi
