Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI4850BDY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4850BDY-T1-GE3
Description
表面贴装 N 沟道 60V 8.4A（Ta），11.3A（Tc） 2.5W（Ta），4.5W（Tc） 8-SO
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Type | N-channel |
| Gate Charge | 17nC@10V |
| Threshold Voltage | 2.8V@250µA |
| Continuous Drain Current | 8.4A, 11.3A |
| Power | 2.5W, 4.5W |
| On-Resistance | 19.5mΩ @ 10A, 10V |
| Input Capacitance | 790pF @ 30V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 8,048
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.7045 | |
| 10+ | $ 1.1126 | |
| 100+ | $ 0.7743 | |
| 500+ | $ 0.6642 | |
| 1000+ | $ 0.5403 | |
| 5000+ | $ 0.4888 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI4850DY-T1-E3-VB
--
Vbsemi
SI4850EY-T1-E3
MOSFET N-CH 60V 6A 8-SOIC
VISHAY
SI4850EY-T1-E3
场效应管(MOSFET) 1.7W 60V 6A 1个N沟道 SOIC-8
VISHAY
SI4850EY-T1-E3-VB
--
Vbsemi
