Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI4850EY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4850EY-T1-GE3
Description
场效应管(MOSFET) 1.7W 60V 6A 1个N沟道 SO-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Saturation Current | 6A |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source On-Resistance | 0.022Ω |
| Power | 3.3W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 15,905
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6141 | |
| 100+ | $ 0.5055 | |
| 1250+ | $ 0.4554 | |
| 2500+ | $ 0.4331 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI4894BDY-T1-E3
场效应管(MOSFET) 1.4W 30V 8.9A 1个N沟道 SOIC-8
VISHAY
SI4894BDY-T1-GE3
MOSFET 30V 12A 2.5W 11mohm @ 10V
VISHAY
SI4896DY-T1-E3
MOSFET 80V 9.5A 3.1W
VISHAY
SI4896DY-T1-GE3
MOSFET 80V 9.5A 3.1W 16.5mohm @ 10V
VISHAY
