Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI4909DY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4909DY-T1-GE3
Description
Dual P-Channel 40 V 27 mOhm Surface Mount TrenchFET Power Mosfet - SOIC-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Continuous Drain Current | 8A |
| Type | P-Channel |
| Gate Charge | 63nC@10V |
| On-Resistance | 27 mΩ |
| Power | 3.2 W |
| Input Capacitance | 2000pF@20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,281
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1433 | |
| 10+ | $ 0.9664 | |
| 30+ | $ 0.8703 | |
| 100+ | $ 0.7631 | |
| 500+ | $ 0.6754 | |
| 1000+ | $ 0.6545 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI4909DY-VB
--
Vbsemi
SI4914BDY-T1-E3
MOSFET RECOMMENDED ALT SI48
VISHAY
SI4920DY-T1-E3-VB
--
Vbsemi
SI4922BDY-T1-E3-VB
--
Vbsemi
