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SI4931DY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4931DY-T1-GE3
Description
场效应管(MOSFET) 1.1W 12V 6.7A 2个P沟道 SOIC-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | 2 P-channel (Dual) |
| Drain-Source Voltage | 12V |
| Power | 1.1W |
| Continuous Drain Current | 6.7A |
| On-Resistance | 18mΩ@8.9A，4.5V |
| Threshold Voltage | 1V@350µA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 45
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7450 | |
| 10+ | $ 0.7269 | |
| 30+ | $ 0.7130 | |
| 100+ | $ 0.6865 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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