Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI4931DY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4931DY-T1-GE3
Description
MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | 2 P-channel (Dual) |
| Drain-Source Voltage | 12V |
| Power | 1.1W |
| Continuous Drain Current | 6.7A |
| On-Resistance | 18mΩ@8.9A，4.5V |
| Threshold Voltage | 1V@350µA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7,058
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 2500+ | $ 1.2032 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI4932DY-T1-GE3
MOSFET 30V 8.0A 3.2W 15mohm @ 10V
VISHAY
SI4936ADY-T1-E3
MOSFET 30V 5.9A 2W
VISHAY
SI4936ADY-T1-E3-HXY
--
HUAXUANYANG
SI4936CDY-T1-GE3
MOSFET 30V 5.8A 2.3W 40mohm @ 10V
VISHAY
