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SI4946CDY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI4946CDY-T1-GE3
Description
场效应管(MOSFET) 2W；2.8W 60V 5.2A；6.1A 2个N沟道 SO-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 3 V @ 250 µA |
| Type | Dual N-Channel |
| Input Capacitance | 350pF @ 30V |
| Continuous Drain Current | 5.2A,6.1A |
| Power | 2W,2.8W |
| On-Resistance | 40.9mΩ@5.2A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 96
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5709 | |
| 100+ | $ 0.4707 | |
| 1250+ | $ 0.4247 | |
| 2500+ | $ 0.4011 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI4947DY-T1-E3-VB
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Vbsemi
SI4948BEY
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UMW
SI4948BEY
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TECH PUBLIC
SI4948BEY-T1-E3
场效应管(MOSFET) 1.4W 60V 2.4A 2个P沟道 SOIC-8
VISHAY
