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SI6562CDQ-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI6562CDQ-T1-GE3
Description
场效应管(MOSFET) 1.6W；1.7W 20V 6.7A；6.1A 1个N沟道+1个P沟道 TSSOP-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.5V@250µA |
| Gate Charge | 23nC@10V |
| Type | N+P-Channel |
| Continuous Drain Current | 5.7A |
| Input Capacitance | 850 pF @ 10 V |
| Power | 1.6W, 1.7W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7617 | |
| 100+ | $ 0.6294 | |
| 750+ | $ 0.5793 | |
| 1500+ | $ 0.5459 | |
| 3000+ | $ 0.5194 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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