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SI7115DN-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7115DN-T1-GE3
Description
场效应管(MOSFET) 3.7W；52W 150V 8.9A 1个P沟道 PowerPAK1212-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Threshold Voltage | 4V@250µA |
| Gate Charge | 42 nC @ 10 V |
| Operating Temperature | -50℃~150℃ |
| Drain-Source Voltage | 150V |
| Power | 3.7W, 52W |
| On-Resistance | 295mΩ@4A，10V |
| Input Capacitance | 1190pF@50V |
| Continuous Drain Current | 8.9A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 15,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4568 | |
| 100+ | $ 0.3788 | |
| 750+ | $ 0.3481 | |
| 1500+ | $ 0.3272 | |
| 3000+ | $ 0.3105 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI7116BDN-T1-GE3
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VISHAY
SI7116DN-T1-E3
MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
VISHAY
SI7116DN-T1-E3
--
VISHAY
SI7116DN-T1-GE3
MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
VISHAY
