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SI7119DN-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7119DN-T1-GE3
Description
场效应管(MOSFET) 3.7W；52W 200V 3.8A 1个P沟道 PowerPAK1212-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 4V@250µA |
| Drain-Source Voltage | 200 V |
| Power | 52W |
| Type | P-Channel |
| Operating Temperature | -50℃~150℃ |
| Continuous Drain Current | 1.2A |
| Gate Charge | 25nC@10V |
| On-Resistance | 1.05Ω |
| Input Capacitance | 666pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3537 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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