Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI7135DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7135DP-T1-GE3
Description
场效应管(MOSFET) 6.25W；104W 30V 60A 1个P沟道 PowerPAK-SO-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Drain-Source Voltage | 30V |
| Type | P-Channel |
| Continuous Drain Current | 60A |
| Gate Charge | 250nC @ 10V |
| Power | 6.25W, 104W |
| On-Resistance | 5mΩ |
| Input Capacitance | 8650pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6,454
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8077 | |
| 100+ | $ 0.6670 | |
| 750+ | $ 0.6113 | |
| 1500+ | $ 0.5765 | |
| 3000+ | $ 0.5501 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI7136DP-T1-GE3-VB
--
Vbsemi
SI7137DP-T1-GE3
MOSFET 20V 60A 104W
VISHAY
SI7137DP-T1-GE3
场效应管(MOSFET) 6.25W；104W 20V 60A 1个P沟道 SOP-8
VISHAY
SI7139DP-T1-GE3
MOSFET P-CH 30V 40A PPAK SO-8
VISHAY
