Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI7155DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7155DP-T1-GE3
Description
表面贴装 P 沟道 40V 31A（Ta），100A（Tc） 6.25W（Ta），104W（Tc） PowerPAK® SO-8
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 40V |
| Threshold Voltage | 2.3 V @ 250 µA |
| Gate Charge | 330nC@10V |
| Power | 6.25W, 104W |
| Continuous Drain Current | 31A, 100A |
| On-Resistance | 3.6mΩ @ 20A, 10V |
| Input Capacitance | 12900pF @ 20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI7157DP-T1-GE3
MOSFET -20V .0016ohm@-10V -60A P-Ch
VISHAY
SI7157DP-T1-GE3
MOSFET -20V .0016ohm@-10V -60A P-Ch
VISHAY
SI7157DP-T1-GE3
Si7157DP Series 20 V 60 A 1.6 mOhm SMT P-Channel Mosfet - PowerPAK® SO-8
VISHAY
SI7190ADP-T1-RE3
--
VISHAY
