Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI7456DDP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7456DDP-T1-GE3
Description
MOSFET 100volt 23mOhms@10V 27.8A N-Ch T-FET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Threshold Voltage | 2.8V@250µA |
| On-Resistance | 23 mΩ |
| Gate Charge | 29.5 nC @ 10 V |
| Drain-Source Voltage | 2.8 V |
| Input Capacitance | 900 pF @ 50 V |
| Power | 5W, 35.7W |
| Continuous Drain Current | 27.8A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,823
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.1707 | |
| 10+ | $ 2.6806 | |
| 100+ | $ 1.8298 | |
| 500+ | $ 1.4650 | |
| 1000+ | $ 1.4357 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI7456DP-T1-E3
场效应管(MOSFET) 1.9W 100V 5.7A 1个N沟道 PowerPAK-SO-8
VISHAY
SI7456DP-T1-GE3
--
VISHAY
SI7456DP-T1-GE3
MOSFET N-CH 100V 5.7A PPAK SO-8
VISHAY
SI7460DP-T1-GE3
--
VISHAY
