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SI7615ADN-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7615ADN-T1-GE3
Description
场效应管(MOSFET) 3.7W；52W 20V 35A 1个P沟道 PowerPAK1212-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.5V@250µA |
| Type | P-Channel |
| Continuous Drain Current | 35A |
| Power | 3.7W, 52W |
| Gate Charge | 183nC @ 10V |
| On-Resistance | 4.4mΩ |
| Input Capacitance | 5590pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 17,792
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.3356 | |
| 100+ | $ 0.2674 | |
| 750+ | $ 0.2353 | |
| 1500+ | $ 0.2200 | |
| 3000+ | $ 0.2089 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI7615CDN-T1-GE3
Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W
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MOSFET P-Chan 20V MOSFET PowerPAK 1212-8
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SI7615CDN-T1-GE3-HXY
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HUAXUANYANG
SI7615DN-T1-GE3
MOSFET 20V 35A 52W 3.9mohm @ 10V
VISHAY
