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SI8816EDB-T2-E1
Manufacturer
VISHAYManufacturer Product Number
SI8816EDB-T2-E1
Description
MOSFET 30V 109mOhm@10V 2.3A N-Ch
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Power | 500mW |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 1.5A |
| Threshold Voltage | 1.4V @ 250µA |
| Gate Charge | 8nC@10V |
| On-Resistance | 109mΩ@1A, 10V |
| Input Capacitance | 195pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 43,853
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1335 | |
| 10+ | $ 0.6949 | |
| 100+ | $ 0.4456 | |
| 500+ | $ 0.3370 | |
| 1000+ | $ 0.3022 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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