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SI9926CDY-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI9926CDY-T1-GE3
Description
场效应管(MOSFET) 3.1W 20V 8A 2个N沟道 SOIC-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 8A |
| Type | Dual N-Channel |
| Threshold Voltage | 1.5V@250µA |
| Power | 3.1W |
| Input Capacitance | 1200pF@10V |
| On-Resistance | 18mΩ@8.3A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 36
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4122 | |
| 10+ | $ 0.4024 | |
| 30+ | $ 0.3969 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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